Van Hoi Tran and Gia Duong Bach (2016) High gain low-noise amplifier design used for RF front end application. In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.
This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent’ ADS 2009 package and machine LPKF Protomat C40.
|Item Type:||Conference or Workshop Item (Poster)|
|Subjects:||Electronics and Communications > Communications|
Electronics and Communications
|Divisions:||Faculty of Electronics and Telecommunications (FET)|
|Deposited By:||Dr Ngoc Thang Bui|
|Deposited On:||23 May 2016 02:20|
|Last Modified:||23 May 2016 02:22|
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