VNU-UET Repository

High gain low-noise amplifier design used for RF front end application

Van Hoi Tran and Gia Duong Bach (2016) High gain low-noise amplifier design used for RF front end application. In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.

[img] PDF
929kB

Abstract

This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent’ ADS 2009 package and machine LPKF Protomat C40.

Item Type:Conference or Workshop Item (Poster)
Subjects:Electronics and Communications > Communications
Electronics and Communications
Divisions:Faculty of Electronics and Telecommunications (FET)
ID Code:1564
Deposited By: Dr Ngoc Thang Bui
Deposited On:23 May 2016 02:20
Last Modified:23 May 2016 02:22

Repository Staff Only: item control page