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Research, manufacturing optimal structure sensor measure the low magnetic field structure Wheatstone bridge base on anistropic magnetoresistance effects

Khac Quynh Le and Dinh Tu Bui and Q. Viet D. and T. Thuy N. and Xuan Toan Nguyen and Mau Danh Tran and Huu Duc Nguyen and Thi Huong Giang Do (2016) Research, manufacturing optimal structure sensor measure the low magnetic field structure Wheatstone bridge base on anistropic magnetoresistance effects. In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.

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Abstract

Fabrication and study of sensors applied to measure low magnetic fields whose the Wheatstone structure basing on anisotropic magnetoresistance effects. The configuration optimatization of sensors was conducted by varying the thickness of NiFe layers (5, 10, 15 nm) as well as the structure of resistive bars. Two types of sensor with the sizes of 50×250 μm and 10×250 μm were examined. The results revealed the significant dependence of sensor signals on sensor shape anisotropy. The resistivie difference (ΔR), the sensitity (SH) and the shape anisotropy were observed to increase as decreasing the thickness of NiFe layer. The highest values (ΔR and SH were obtained to be 10Ω and 0.88 Ω/Oe (~ 0,88 mV/Oe), respectively) were found in the sensor with the size of 10×250 μm and 5 nm-thickness. The function of the output voltage versus the Earth's magnetic field and the sensor axis was fitted to be V = A + B*cosα (A, B are empirical constants), and Sα = 8.8 (μV/deg.)

Item Type:Conference or Workshop Item (Poster)
Subjects:Engineering Physics
Divisions:Faculty of Engineering Physics and Nanotechnology (FEPN)
ID Code:1568
Deposited By: Dr Ngoc Thang Bui
Deposited On:23 May 2016 01:28
Last Modified:23 May 2016 01:31

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