VNU-UET Repository: No conditions. Results ordered -Date Deposited. 2024-03-29T15:13:26ZEPrintshttp://eprints.uet.vnu.edu.vn/images/sitelogo.pnghttps://eprints.uet.vnu.edu.vn/eprints/2019-11-28T09:01:47Z2019-11-29T05:48:15Zhttp://eprints.uet.vnu.edu.vn/eprints/id/eprint/3587This item is in the repository with the URL: http://eprints.uet.vnu.edu.vn/eprints/id/eprint/35872019-11-28T09:01:47ZHigh thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrateThermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019–1020 cm−3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019–1020 cm−3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 μW cm−1 K−2 at 220 K with a carrier concentration of 5.2 × 1019 cm−3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm−1 and −192 μVK−1, respectively.Anh Tuan DuongDinh Lam Nguyenlamnd2005@vnu.edu.vnManh Nghia NguyenThi Minh Hai NguenAnh Duc NguyenAnh Tuan PhamParman UllahTahir ZeeshanYong Soo KimQuang Trung DoTu NguyenVan Hao BuiDas RajaThanh Huy PhamSunglae Cho2019-11-27T07:06:06Z2019-11-27T07:06:06Zhttp://eprints.uet.vnu.edu.vn/eprints/id/eprint/3406This item is in the repository with the URL: http://eprints.uet.vnu.edu.vn/eprints/id/eprint/34062019-11-27T07:06:06ZEnhanced magneto-transport and thermoelectric properties of MnP nanorod thin flms grown on Si (1 0 0)The MnP thin flms were grown on Si (1 0 0) substrates at 300 and 400 °C using molecular beam epitaxy (MBE). The flms crystallize in an orthorhombic structure. FESEM images indicated that both flms are composed of vertically aligned MnP nanorods. However, the density of the nanorods in the flm grown at 400 °C is higher
than that grown at 300 °C, leading to a considerable decrease of resistivity in this sample. Both flms showed a ferromagnetic behavior, but the Curie temperature
increased from 275 K for the flm grown at 300 °C to 325 K for the flm grown at 400 °C. Anomalous Hall effect (AHE) and negative magneto-resistance (MR) were
observed in the flms. While both flms exhibited a metallic behavior, a higher thermoelectric power factor (PF) was achieved for the flm grown at 400 °CAnh Tuan DuongThi Minh Hai NguyenDinh Lam Nguyenlamnd2005@vnu.edu.vnDas RajaHuu Tuan NguyenBach Thang PhanSunglae Cho