VNU-UET Repository: No conditions. Results ordered -Date Deposited. 2024-03-28T13:56:28ZEPrintshttp://eprints.uet.vnu.edu.vn/images/sitelogo.pnghttps://eprints.uet.vnu.edu.vn/eprints/2018-11-24T01:58:46Z2018-11-24T01:58:46Zhttp://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001This item is in the repository with the URL: http://eprints.uet.vnu.edu.vn/eprints/id/eprint/30012018-11-24T01:58:46ZInvestigation on solution-processed In-Si-O thin film transistor via spin-coating methodIn this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.Ha HoangTatsuki HoriTo-oru YasudaTakio KizuKazuhito TsukagoshiToshihide NabatameNguyen Quoc Trinh Buitrinhbnq@vnu.edu.vnAkihiko Fujiwara2018-11-20T09:05:19Z2018-11-20T09:05:19Zhttp://eprints.uet.vnu.edu.vn/eprints/id/eprint/3164This item is in the repository with the URL: http://eprints.uet.vnu.edu.vn/eprints/id/eprint/31642018-11-20T09:05:19ZSi-doping effect on solution-processed In-O thin-film transistorsIn this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first
time by a solution processing method. By varying the Si concentration in the In2O3–SiO2 binary oxide
structure up to 15 at%, the thicknesses, densities, and crystallinity of the resulting In–Si–O(ISO) thin
films were investigated by x-ray reflectivity (XRR) and x-ray diffraction techniques, while the
produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis
revealed that the increase in the content of Si dopant increased the thickness of the produced film and
reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase
even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a
reduction in the absolute value of threshold voltage VT close to 0 Vand low current in the off-state, as
compared to those of the non-doped indium oxide films, due to the reduced number of oxygen
defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The
ISO TFT with a Si content of 3 at% annealed at 400 °Cdemonstrated the smallest subthreshold swing
of 0.5 V/dec, VT of−5 V, mobility of 0.21 cm2 V−1s−1, and on/off current ratio of about 2×107.Ha HoangTatsuki HoriTo-oru YasudaTakio KizuKazuhito TsukagoshiToshihide NabatameNguyen Quoc Trinh BuiAkihiko Fujiwara