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Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications

Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru (2018) Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications. International Journal of Electrical and Computer Engineering, 8 (2). ISSN 2088-8708 (In Press)

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This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.

Item Type: Article
Subjects: Electronics and Communications
Scopus-indexed journals
Divisions: Faculty of Electronics and Telecommunications (FET)
Depositing User: Vu Tuan Anh
Date Deposited: 12 Jan 2018 02:03
Last Modified: 12 Jan 2018 02:03

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