?url_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.au=Nagahara%2C+K.&rft.aulast=Nagahara&rft.aufirst=K.&rft.volume=53&rft.date=2014&rft.issn=0021-4922&rft.atitle=120+nm+Channel+Length+Ferroelectric+Gate+Thin-Film+Transistor+by+Nano-imprinting+Lithography&rft.title=Japanese+Journal+of+Applied+Physics%2C+2014&rft.pages=02BC14-1&rft.genre=article