relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1284/
title: 120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography
creator: Nagahara, K.
creator: Bui, Nguyen Quoc Trinh
creator: Tokumitsu, E.
creator: Inoue, S.
creator: Shimoda, T.
subject: Engineering Physics
date: 2014
type: Article
type: PeerReviewed
identifier:   Nagahara, K. and Bui, Nguyen Quoc Trinh and Tokumitsu, E. and Inoue, S. and Shimoda, T.  (2014) 120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography.  Japanese Journal of Applied Physics, 2014, 53 .   02BC14-1.  ISSN 0021-4922