eprintid: 1284
rev_number: 11
eprint_status: archive
userid: 5
dir: disk0/00/00/12/84
datestamp: 2015-08-12 03:40:02
lastmod: 2015-08-14 07:50:20
status_changed: 2015-08-12 03:40:02
type: article
metadata_visibility: show
creators_name: Nagahara, K.
creators_name: Bui, Nguyen Quoc Trinh
creators_name: Tokumitsu, E.
creators_name: Inoue, S.
creators_name: Shimoda, T.
creators_id: trinhbnq@vnu.edu.vn
title: 120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography
ispublished: pub
subjects: Phys
divisions: fac_physic
date: 2014
date_type: published
full_text_status: none
publication: Japanese Journal of Applied Physics, 2014
volume: 53
pagerange: 02BC14-1
refereed: TRUE
issn: 0021-4922
citation:   Nagahara, K. and Bui, Nguyen Quoc Trinh and Tokumitsu, E. and Inoue, S. and Shimoda, T.  (2014) 120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography.  Japanese Journal of Applied Physics, 2014, 53 .   02BC14-1.  ISSN 0021-4922