<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Huge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel"^^ . "We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel. Keywords: PZT, Thin film transistor (TFT), ferroelectric, ITO, FeRAM."^^ . "2014" . "30" . . "VNU Journal of Science"^^ . . . "08668612" . . . . . . . . . . . . . "Hong Minh"^^ . "Do"^^ . "Hong Minh Do"^^ . . "Nguyen Quoc Trinh"^^ . "Bui"^^ . "Nguyen Quoc Trinh Bui"^^ . . "Thi Huyen Trang"^^ . "Vu"^^ . "Thi Huyen Trang Vu"^^ . . . . . "HTML Summary of #1285 \n\nHuge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel\n\n" . "text/html" . . . "Engineering Physics" . .