TY  - JOUR
ID  - SisLab1285
UR  - https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1285/
A1  - Do, Hong Minh
A1  - Vu, Thi Huyen Trang
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2014///
N2  - We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated ?on? current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large ?on? current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel. Keywords: PZT, Thin film transistor (TFT), ferroelectric, ITO, FeRAM.
JF  - VNU Journal of Science
VL  - 30
SN  - 0866-8612
TI  - Huge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
SP  - 16
AV  - none
EP  - 23
ER  -