eprintid: 1285
rev_number: 8
eprint_status: archive
userid: 5
dir: disk0/00/00/12/85
datestamp: 2015-11-07 04:42:50
lastmod: 2015-11-09 05:54:56
status_changed: 2015-11-07 04:42:50
type: article
metadata_visibility: show
creators_name: Do, Hong Minh
creators_name: Vu, Thi Huyen Trang
creators_name: Bui, Nguyen Quoc Trinh
creators_id: trinhbnq@vnu.edu.vn
title: Huge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
ispublished: pub
subjects: Phys
divisions: fac_physic
abstract: We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel. Keywords: PZT, Thin film transistor (TFT), ferroelectric, ITO, FeRAM.
date: 2014
date_type: published
full_text_status: none
publication: VNU Journal of Science
volume: 30
pagerange: 16-23
refereed: TRUE
issn: 0866-8612
citation:   Do, Hong Minh and Vu, Thi Huyen Trang and Bui, Nguyen Quoc Trinh  (2014) Huge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel.  VNU Journal of Science, 30 .   pp. 16-23.  ISSN 0866-8612