eprintid: 1287
rev_number: 12
eprint_status: archive
userid: 5
dir: disk0/00/00/12/87
datestamp: 2015-11-07 04:39:51
lastmod: 2015-11-09 05:57:15
status_changed: 2015-11-07 04:39:51
type: conference_item
metadata_visibility: show
creators_name: V., T.H. Trang
creators_name: T., V. Dung
creators_name: D., H. Minh
creators_name: N., Q. Hoa
creators_name: Bui, Nguyen Quoc Trinh
creators_id: trinhbnq@vnu.edu.vn
title: Operation Stability of Ferroelectric-gate Thin-Film Transistor with LaTaO/PZT Stacked Structure
ispublished: pub
subjects: Phys
divisions: fac_physic
date: 2014
date_type: published
full_text_status: none
pres_type: paper
event_title: 2014: International Symposium on Nano-materials, Technology and Application (NaNoMaTa)
event_location: Hanoi, Vietnam
event_dates: 15-17 October 2014
event_type: conference
refereed: TRUE
citation:   V., T.H. Trang and T., V. Dung and D., H. Minh and N., Q. Hoa and Bui, Nguyen Quoc Trinh  (2014) Operation Stability of Ferroelectric-gate Thin-Film Transistor with LaTaO/PZT Stacked Structure.  In: 2014: International Symposium on Nano-materials, Technology and Application (NaNoMaTa), 15-17 October 2014, Hanoi, Vietnam.