%A Dinh Tu Bui
%A T.Q. Hung
%A N.T. Thanh
%A T.M. Danh
%A Huu Duc Nguyen
%A CheolGi Kim
%J Journal of Applied Physics
%T Planar Hall Bead Array Counter Microchip with NiFe/IrMn Bilayers
%X The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3×3 μm2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 mΩ/Oe. It was well applied for single Dynabeads® M-280 detection, where one bead can induce a signal change, ΔV∼2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment.
%N 7
%K Hall effect;Hall effect devices;biological techniques;ferromagnetic materials;interface magnetism;iridium alloys;iron alloys;magnetic anisotropy;magnetic sensors;magnetoresistance;manganese alloys;nickel alloys;0707Df;8575Nn
%P 074701-074701
%V 104
%D 2008
%L SisLab144