eprintid: 144
rev_number: 7
eprint_status: archive
userid: 4
dir: disk0/00/00/01/44
datestamp: 2013-03-27 06:30:11
lastmod: 2016-05-21 05:14:45
status_changed: 2013-03-27 06:30:11
type: article
metadata_visibility: show
creators_name: Bui, Dinh Tu
creators_name: Hung, T.Q.
creators_name: Thanh, N.T.
creators_name: Danh, T.M.
creators_name: Nguyen, Huu Duc
creators_name: Kim, CheolGi
creators_id: buidinhtu@vnu.edu.vn
creators_id: danhtm@vnu.edu.vn
creators_id: ducnh@vnu.edu.vn
title: Planar Hall Bead Array Counter Microchip with NiFe/IrMn Bilayers
ispublished: pub
subjects: Nano
divisions: fac_physic
keywords: Hall effect;Hall effect devices;biological techniques;ferromagnetic materials;interface magnetism;iridium alloys;iron alloys;magnetic anisotropy;magnetic sensors;magnetoresistance;manganese alloys;nickel alloys;0707Df;8575Nn
abstract: The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3×3 μm2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 mΩ/Oe. It was well applied for single Dynabeads® M-280 detection, where one bead can induce a signal change, ΔV∼2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment.
date: 2008
date_type: published
full_text_status: none
publication: Journal of Applied Physics
volume: 104
number: 7
pagerange: 074701-074701
refereed: TRUE
citation:   Bui, Dinh Tu and Hung, T.Q. and Thanh, N.T. and Danh, T.M. and Nguyen, Huu Duc and Kim, CheolGi  (2008) Planar Hall Bead Array Counter Microchip with NiFe/IrMn Bilayers.  Journal of Applied Physics, 104  (7).   074701-074701.