relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1564/
title: High gain low-noise amplifier design used for RF front end application
creator: Tran, Van Hoi
creator: Bach, Gia Duong
subject: Communications
subject: Electronics and Communications
description: This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent’ ADS 2009 package and machine LPKF Protomat C40.
date: 2016-03-26
type: Conference or Workshop Item
type: NonPeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1564/1/Phdposters_Tran%20Van%20Hoi.pdf
identifier:   Tran, Van Hoi and Bach, Gia Duong  (2016) High gain low-noise amplifier design used for RF front end application.  In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.