TY  - CONF
ID  - SisLab1564
UR  - https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1564/
A1  - Tran, Van Hoi
A1  - Bach, Gia Duong
Y1  - 2016/03/26/
N2  - This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent? ADS 2009 package and machine LPKF Protomat C40.
TI  - High gain low-noise amplifier design used for RF front end application
M2  - Hanoi
AV  - public
T2  - SW4PHD: the 2016 Scientific Workshop for PhD Students
ER  -