eprintid: 1564
rev_number: 9
eprint_status: archive
userid: 243
dir: disk0/00/00/15/64
datestamp: 2016-05-23 02:20:42
lastmod: 2016-05-23 02:22:01
status_changed: 2016-05-23 02:20:42
type: conference_item
metadata_visibility: show
creators_name: Tran, Van Hoi
creators_name: Bach, Gia Duong
creators_id: duongbg@vnu.edu.vn
title: High gain low-noise amplifier design used for RF front end application
ispublished: pub
subjects: Communications
subjects: ECE
divisions: fac_fet
abstract: This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent’ ADS 2009 package and machine LPKF Protomat C40.
date: 2016-03-26
date_type: published
full_text_status: public
pres_type: poster
event_title: SW4PHD: the 2016 Scientific Workshop for PhD Students
event_location: Hanoi
event_dates: 26 March 2016
event_type: workshop
refereed: FALSE
citation:   Tran, Van Hoi and Bach, Gia Duong  (2016) High gain low-noise amplifier design used for RF front end application.  In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1564/1/Phdposters_Tran%20Van%20Hoi.pdf