%0 Conference Paper
%A Le, Khac Quynh
%A Bui, Dinh Tu
%A D., Q. Viet
%A N., T. Thuy
%A Nguyen, Xuan Toan
%A Tran, Mau Danh
%A Nguyen, Huu Duc
%A Do, Thi Huong Giang
%B SW4PHD: the 2016 Scientific Workshop for PhD Students
%C Hanoi
%D 2016
%F SisLab:1568
%T Research, manufacturing optimal structure sensor measure the low magnetic field structure Wheatstone bridge base on anistropic magnetoresistance effects
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/1568/
%X Fabrication and study of sensors applied to measure low magnetic fields whose the Wheatstone structure basing on anisotropic magnetoresistance effects. The configuration optimatization of sensors was conducted by varying the thickness of NiFe layers (5, 10, 15 nm) as well as the structure of resistive bars. Two types of sensor with the sizes of 50×250 μm and 10×250 μm were examined. The results revealed the significant dependence of sensor signals on sensor shape anisotropy. The resistivie difference (ΔR), the sensitity (SH) and the shape anisotropy were observed to increase as decreasing the thickness of NiFe layer. The highest values (ΔR and SH were obtained to be 10Ω and 0.88 Ω/Oe (~ 0,88 mV/Oe), respectively) were found in the sensor with the size of 10×250 μm and 5 nm-thickness. The function of the output voltage versus the Earth's magnetic field and the sensor axis was fitted to be V = A + B*cosα (A, B are empirical constants), and Sα = 8.8 (μV/deg.)