@inproceedings{SisLab2616,
           month = {August},
          author = {Tuan Anh Vu and Kyoya Takano and Minoru Fujishima},
       booktitle = {2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)},
           title = {A 300 GHz single varactor doubler in 40 nm CMOS},
         journal = {2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)},
             doi = {10.1109/RFIT.2017.8048260},
           pages = {165--167},
            year = {2017},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2616/},
        abstract = {This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.}
}