relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2616/
title: A 300 GHz single varactor doubler in 40 nm CMOS
creator: Vu, Tuan Anh
creator: Takano, Kyoya
creator: Fujishima, Minoru
subject: Electronics and Communications
description: This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.
date: 2017-08-30
type: Conference or Workshop Item
type: NonPeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2616/1/08048260.pdf
identifier:   Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru  (2017) A 300 GHz single varactor doubler in 40 nm CMOS.  In: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 30 Aug - 1 Sept 2017, Seoul, Korea.     
relation: http://ieeexplore.ieee.org/document/8048260/
relation: 10.1109/RFIT.2017.8048260