%0 Conference Paper
%A Vu, Tuan Anh
%A Takano, Kyoya
%A Fujishima, Minoru
%B 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
%C Seoul, Korea
%D 2017
%F SisLab:2616
%P 165-167
%T A 300 GHz single varactor doubler in 40 nm CMOS
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2616/
%X This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.