TY  - CONF
ID  - SisLab2616
UR  - http://ieeexplore.ieee.org/document/8048260/
A1  - Vu, Tuan Anh
A1  - Takano, Kyoya
A1  - Fujishima, Minoru
Y1  - 2017/08/30/
N2  - This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.
TI  - A 300 GHz single varactor doubler in 40 nm CMOS
SP  - 165
M2  - Seoul, Korea
AV  - public
EP  - 167
T2  - 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
ER  -