%A Tuan Anh Vu
%A Kyoya Takano
%A Minoru Fujishima
%J 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
%T A 300 GHz single varactor doubler in 40 nm CMOS
%X This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.
%P 165-167
%D 2017
%C Seoul, Korea
%R 10.1109/RFIT.2017.8048260
%L SisLab2616