eprintid: 2616
rev_number: 13
eprint_status: archive
userid: 342
dir: disk0/00/00/26/16
datestamp: 2017-11-06 21:18:53
lastmod: 2017-11-06 21:18:53
status_changed: 2017-11-06 21:18:53
type: conference_item
metadata_visibility: show
creators_name: Vu, Tuan Anh
creators_name: Takano, Kyoya
creators_name: Fujishima, Minoru
creators_id: tanhvu@vnu.edu.vn
creators_id: kyoya@hiroshima-u.ac.jp
creators_id: fuji@hiroshima-u.ac.jp
title: A 300 GHz single varactor doubler in 40 nm CMOS
ispublished: pub
subjects: ECE
divisions: fac_fet
abstract: This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.
date: 2017-08-30
date_type: published
official_url: http://ieeexplore.ieee.org/document/8048260/
id_number: 10.1109/RFIT.2017.8048260
full_text_status: public
pres_type: poster
publication: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
pagerange: 165-167
event_title: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
event_location: Seoul, Korea
event_dates: 30 Aug - 1 Sept 2017
event_type: conference
refereed: FALSE
citation:   Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru  (2017) A 300 GHz single varactor doubler in 40 nm CMOS.  In: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 30 Aug - 1 Sept 2017, Seoul, Korea.     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2616/1/08048260.pdf