?url_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.au=Pham%2C+Van+Thanh&rft.aulast=Pham&rft.aufirst=Van+Thanh&rft.volume=51&rft.date=20+September+2012&rft.issn=0021-4922&rft.atitle=Electric+Properties+and+Interface+Charge+Trap+Density+of+Ferroelectric+Gate+Thin+Film+Transistor+Using+(Bi%2CLa)4Ti3O12%2FPb(Zr%2CTi)O3+Stacked+Gate+Insulator&rft.title=Japanese+Journal+of+Applied+Physics%2C+2014&rft.pages=09LA09&rft.genre=article