<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator"^^ . "We successfully fabricated ferroelectric gate thin film transistors (FGTs) using solution-processed (Bi,La)4Ti3O12 (BLT)/Pb(Zr,Ti)O3 (PZT)\r\nstacked films and an indium–tin oxide (ITO) film as ferroelectric gate insulators and an oxide channel, respectively. The typical n-type channel\r\ntransistors were obtained with the counterclockwise hysteresis loop due to the ferroelectric property of the BLT/PZT stacked gate insulators.\r\nThese FGTs exhibited good device performance characteristics, such as a high ON/OFF ratio of 106, a large memory window of 1.7–3.1 V, and a\r\nlarge ON current of 0.5–2.5 mA. In order to investigate interface charge trapping for these devices, we applied the conductance method to MFS\r\ncapacitors, i.e., Pt/ITO/BLT/PZT/Pt capacitors. As a result, the interface charge trap density (Dit) between the ITO and BLT/PZT stacked films\r\nwas estimated to be in the range of 10�11–10�12 eV�1 cm�2. The small Dit value suggested that good interfaces were achieved."^^ . "2012-09-20" . . "51" . . "Japanese Journal of Applied Physics, 2014"^^ . . . "00214922" . . . . . . . . . . . . . . . . . . . . . . "Trong Tue"^^ . "Phan"^^ . "Trong Tue Phan"^^ . . "Shimoda"^^ . "Tatsuya"^^ . "Shimoda Tatsuya"^^ . . "Nguyen Quoc Trinh"^^ . "Bui"^^ . "Nguyen Quoc Trinh Bui"^^ . . "Miyasako"^^ . "Takaaki"^^ . "Miyasako Takaaki"^^ . . "Van Thanh"^^ . "Pham"^^ . "Van Thanh Pham"^^ . . "Tokumitsu"^^ . "Eisuke"^^ . "Tokumitsu Eisuke"^^ . . "Bui Nguyen Quoc Trinh"^^ . . . . . . . "Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator (PDF)"^^ . . . "10. JJAP2012 -51-09LA09.pdf"^^ . . "HTML Summary of #2619 \n\nElectric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator\n\n" . "text/html" . . . "ISI-indexed journals"@en . .