eprintid: 2619
rev_number: 9
eprint_status: archive
userid: 303
dir: disk0/00/00/26/19
datestamp: 2017-11-08 07:13:14
lastmod: 2017-11-08 07:13:14
status_changed: 2017-11-08 07:13:14
type: article
metadata_visibility: show
creators_name: Pham, Van Thanh
creators_name: Bui, Nguyen Quoc Trinh
creators_name: Takaaki, Miyasako
creators_name: Phan, Trong Tue
creators_name: Eisuke, Tokumitsu
creators_name: Tatsuya, Shimoda
creators_id: trinhbnq@vnu.edu.vn
corp_creators: Bui Nguyen Quoc Trinh
title: Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator
ispublished: pub
subjects: isi
divisions: fac_physic
abstract: We successfully fabricated ferroelectric gate thin film transistors (FGTs) using solution-processed (Bi,La)4Ti3O12 (BLT)/Pb(Zr,Ti)O3 (PZT)
stacked films and an indium–tin oxide (ITO) film as ferroelectric gate insulators and an oxide channel, respectively. The typical n-type channel
transistors were obtained with the counterclockwise hysteresis loop due to the ferroelectric property of the BLT/PZT stacked gate insulators.
These FGTs exhibited good device performance characteristics, such as a high ON/OFF ratio of 106, a large memory window of 1.7–3.1 V, and a
large ON current of 0.5–2.5 mA. In order to investigate interface charge trapping for these devices, we applied the conductance method to MFS
capacitors, i.e., Pt/ITO/BLT/PZT/Pt capacitors. As a result, the interface charge trap density (Dit) between the ITO and BLT/PZT stacked films
was estimated to be in the range of 10�11–10�12 eV�1 cm�2. The small Dit value suggested that good interfaces were achieved.
date: 2012-09-20
date_type: published
full_text_status: public
publication: Japanese Journal of Applied Physics, 2014
volume: 51
pagerange: 09LA09
refereed: TRUE
issn: 0021-4922
citation:   Pham, Van Thanh and Bui, Nguyen Quoc Trinh and Takaaki, Miyasako and Phan, Trong Tue and Eisuke, Tokumitsu and Tatsuya, Shimoda  (2012) Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator.  Japanese Journal of Applied Physics, 2014, 51 .   09LA09.  ISSN 0021-4922     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2619/1/10.%20JJAP2012%20-51-09LA09.pdf