relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2621/
title: Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure
creator: Pham, Van Thanh
creator: Bui, Nguyen Quoc Trinh
creator: Takaaki, Miyasako
creator: Phan, Trong Tue
creator: Eisuke, Tokumitsu
creator: Tatsuya, Shimoda
subject: Engineering Physics
subject: ISI-indexed journals
description: The conductance method was applied to investigate the interface charge trap density  (Dit) of solution processed ferroelectric gate thin film transistor (FGT) using indium-tin  oxide (ITO)/ Pb(Zr,Ti)O3 (PZT)/Pt structure. As a result, a large value of Dit of MFS  capacitor, i.e., Pt/PZT/ITO, was estimated to be 1.2 × 1014 eV−1 cm−2. This large Dit  means that an interface between the ITO layer and the PZT layer is imperfect and it is  one of themain reasons for the poor memory property of this FGT. By using transmission  electron microscopy (TEM), this imperfect interface was clearly observed. Thus, it is  concluded that improvement of this interface is critical for better memory performance.
date: 2013
type: Article
type: PeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2621/1/12.%20Ferroelectrics%20Letters-2013%20%28Thanh-Trinh%29.pdf
identifier:   Pham, Van Thanh and Bui, Nguyen Quoc Trinh and Takaaki, Miyasako and Phan, Trong Tue and Eisuke, Tokumitsu and Tatsuya, Shimoda  (2013) Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure.  Ferroelectrics Letters, 40  (2013).   pp. 17-29.