eprintid: 2621
rev_number: 9
eprint_status: archive
userid: 303
dir: disk0/00/00/26/21
datestamp: 2017-11-08 07:18:14
lastmod: 2017-11-08 07:18:14
status_changed: 2017-11-08 07:18:14
type: article
metadata_visibility: show
creators_name: Pham, Van Thanh
creators_name: Bui, Nguyen Quoc Trinh
creators_name: Takaaki, Miyasako
creators_name: Phan, Trong Tue
creators_name: Eisuke, Tokumitsu
creators_name: Tatsuya, Shimoda
creators_id: trinhbnq@vnu.edu.vn
corp_creators: PHAM VAN THANH
title: Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure
ispublished: pub
subjects: Phys
subjects: isi
divisions: fac_physic
abstract: The conductance method was applied to investigate the interface charge trap density
(Dit) of solution processed ferroelectric gate thin film transistor (FGT) using indium-tin
oxide (ITO)/ Pb(Zr,Ti)O3 (PZT)/Pt structure. As a result, a large value of Dit of MFS
capacitor, i.e., Pt/PZT/ITO, was estimated to be 1.2 × 1014 eV−1 cm−2. This large Dit
means that an interface between the ITO layer and the PZT layer is imperfect and it is
one of themain reasons for the poor memory property of this FGT. By using transmission
electron microscopy (TEM), this imperfect interface was clearly observed. Thus, it is
concluded that improvement of this interface is critical for better memory performance.
date: 2013
date_type: published
full_text_status: public
publication: Ferroelectrics Letters
volume: 40
number: 2013
pagerange: 17-29
refereed: TRUE
citation:   Pham, Van Thanh and Bui, Nguyen Quoc Trinh and Takaaki, Miyasako and Phan, Trong Tue and Eisuke, Tokumitsu and Tatsuya, Shimoda  (2013) Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure.  Ferroelectrics Letters, 40  (2013).   pp. 17-29.      
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2621/1/12.%20Ferroelectrics%20Letters-2013%20%28Thanh-Trinh%29.pdf