relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624/
title: Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
creator: Do, Hong Minh
creator: Nguyen, Van Loi
creator: Nguyen, Huu Duc
creator: Bui, Nguyen Quoc Trinh
subject: Engineering Physics
description: In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is  extremely important for inducing the charge when accumulating or depleting. We concentrated on the  application of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional  high temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated  that the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation,  large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low  leakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below  500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of  105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h.
publisher: Elsevier B.V
date: 2016-04
type: Article
type: PeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624/1/15.%20JSAMD-2016%20%28Elsevier%29.pdf
identifier:   Do, Hong Minh and Nguyen, Van Loi and Nguyen, Huu Duc and Bui, Nguyen Quoc Trinh  (2016) Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates.  Journal of Science: Advanced Materials and Devices, 1 .   pp. 75-79.  ISSN 2468-2179