%0 Journal Article
%@ 2468-2179
%A Do, Hong Minh
%A Nguyen, Van Loi
%A Nguyen, Huu Duc
%A Bui, Nguyen Quoc Trinh
%A BUI NGUYEN QUOC TRINH,
%D 2016
%F SisLab:2624
%I Elsevier B.V
%J Journal of Science: Advanced Materials and Devices
%P 75-79
%T Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624/
%V 1
%X In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is  extremely important for inducing the charge when accumulating or depleting. We concentrated on the  application of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional  high temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated  that the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation,  large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low  leakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below  500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of  105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h.