<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates"^^ . "In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is\r\nextremely important for inducing the charge when accumulating or depleting. We concentrated on the\r\napplication of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional\r\nhigh temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated\r\nthat the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation,\r\nlarge remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low\r\nleakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below\r\n500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of\r\n105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h."^^ . "2016-04" . . "1" . . "Elsevier B.V"^^ . . . "Journal of Science: Advanced Materials and Devices"^^ . . . "24682179" . . . . . . . . . . . . . . . . "Hong Minh"^^ . "Do"^^ . "Hong Minh Do"^^ . . "Nguyen Quoc Trinh"^^ . "Bui"^^ . "Nguyen Quoc Trinh Bui"^^ . . "Van Loi"^^ . "Nguyen"^^ . "Van Loi Nguyen"^^ . . "Huu Duc"^^ . "Nguyen"^^ . "Huu Duc Nguyen"^^ . . "BUI NGUYEN QUOC TRINH"^^ . . . . . . . "Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates (PDF)"^^ . . . "15. JSAMD-2016 (Elsevier).pdf"^^ . . "HTML Summary of #2624 \n\nLow-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates\n\n" . "text/html" . . . "Engineering Physics" . .