TY  - JOUR
ID  - SisLab2624
UR  - https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624/
A1  - Do, Hong Minh
A1  - Nguyen, Van Loi
A1  - Nguyen, Huu Duc
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2016/04//
N2  - In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is
extremely important for inducing the charge when accumulating or depleting. We concentrated on the
application of low-temperature PZT films crystallized at 450, 500 and 550 ?C, instead of at conventional
high temperatures (?600 ?C). Investigation of the crystalline structure and electrical properties indicated
that the PZT film, crystallized at 500 ?C, was suitable for FGT fabrication because of a high (111) orientation,
large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low
leakage current of 10?6 A/cm2. In sequence, we successfully fabricated FGT with all processes below
500 ?C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of
105, field-effect mobility of 0.092 cm2 V?1 s?1, and retention time of 1 h.
PB  - Elsevier B.V
JF  - Journal of Science: Advanced Materials and Devices
VL  - 1
SN  - 2468-2179
TI  - Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
SP  - 75
AV  - public
EP  - 79
ER  -