%A Hong Minh Do
%A Van Loi Nguyen
%A Huu Duc Nguyen
%A Nguyen Quoc Trinh Bui
%J Journal of Science: Advanced Materials and Devices
%T Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
%X In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is
extremely important for inducing the charge when accumulating or depleting. We concentrated on the
application of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional
high temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated
that the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation,
large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low
leakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below
500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of
105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h.
%P 75-79
%V 1
%D 2016
%I Elsevier B.V
%L SisLab2624