eprintid: 2624
rev_number: 7
eprint_status: archive
userid: 303
dir: disk0/00/00/26/24
datestamp: 2017-11-09 03:21:27
lastmod: 2017-11-09 03:21:27
status_changed: 2017-11-09 03:21:27
type: article
metadata_visibility: show
creators_name: Do, Hong Minh
creators_name: Nguyen, Van Loi
creators_name: Nguyen, Huu Duc
creators_name: Bui, Nguyen Quoc Trinh
creators_id: ducnh@vnu.edu.vn
creators_id: trinhbnq@vnu.edu.vn
corp_creators: BUI NGUYEN QUOC TRINH
title: Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
ispublished: pub
subjects: Phys
divisions: fac_physic
abstract: In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is
extremely important for inducing the charge when accumulating or depleting. We concentrated on the
application of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional
high temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated
that the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation,
large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low
leakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below
500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of
105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h.
date: 2016-04
date_type: published
publisher: Elsevier B.V
full_text_status: public
publication: Journal of Science: Advanced Materials and Devices
volume: 1
pagerange: 75-79
refereed: TRUE
issn: 2468-2179
citation:   Do, Hong Minh and Nguyen, Van Loi and Nguyen, Huu Duc and Bui, Nguyen Quoc Trinh  (2016) Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates.  Journal of Science: Advanced Materials and Devices, 1 .   pp. 75-79.  ISSN 2468-2179     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624/1/15.%20JSAMD-2016%20%28Elsevier%29.pdf