TY  - CONF
ID  - SisLab2625
UR  - http://tact2017.conf.tw/site/page.aspx?pid=99&sid=1130&lang=en
A1  - Nguyen, Van Loi
A1  - Vu, Van Loi
A1  - Bui, Quoc Huy Hoang
A1  - Do, Hong Minh
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2017/10/17/
N2  - Sn-doped indium oxide (ITO) semiconductor thin films have been extensively applied in electronic devices such as photonics and thin film transistors, owing to high transparence and controllable mobility and conductivity. Past few years, we reported a success to demonstrate a ferroelectric thin-film transistor (FeTFT) by using all solution processes, in which 450oC ITO thin film used as a channel, and perovskite-structured thin film used as a gate insulator [1]. In sequence, sub-100 nm FeTFT patterned by using electron beam lithography [2] and low temperature process of FeTFT [3] have been verified as well. In this study, we succeed to fabricate sub-micro and sub-100 nm FeTFTs with precise alignment, whose typical operations possess an on/off current ratio of 4 to 5 orders, memory window of about 1.5 V, and on-current amplitude of several 100 ?A levels. Therefore, we present achievement on FeTFT by using the patterns of nanoimprinting lithography in micrometer and nanometer scales, and compare with conventional techniques, in this conference.
TI  - Nanoimprinting Lithography Patterned Thin-Film Transistors with Sn-Doped Indium Oxide Channel
M2  - Hualien, Taiwan
AV  - public
T2  - International Thin Films Conference (TACT2017)
ER  -