%A Van Loi Nguyen
%A Van Loi Vu
%A Quoc Huy Hoang Bui
%A Hong Minh Do
%A Nguyen Quoc Trinh Bui
%T Nanoimprinting Lithography Patterned Thin-Film Transistors with Sn-Doped Indium Oxide Channel
%X Sn-doped indium oxide (ITO) semiconductor thin films have been extensively applied in electronic devices such as photonics and thin film transistors, owing to high transparence and controllable mobility and conductivity. Past few years, we reported a success to demonstrate a ferroelectric thin-film transistor (FeTFT) by using all solution processes, in which 450oC ITO thin film used as a channel, and perovskite-structured thin film used as a gate insulator [1]. In sequence, sub-100 nm FeTFT patterned by using electron beam lithography [2] and low temperature process of FeTFT [3] have been verified as well. In this study, we succeed to fabricate sub-micro and sub-100 nm FeTFTs with precise alignment, whose typical operations possess an on/off current ratio of 4 to 5 orders, memory window of about 1.5 V, and on-current amplitude of several 100 A levels. Therefore, we present achievement on FeTFT by using the patterns of nanoimprinting lithography in micrometer and nanometer scales, and compare with conventional techniques, in this conference.
%C Hualien, Taiwan
%D 2017
%L SisLab2625