@inproceedings{SisLab2626,
       booktitle = {International Thin Films Conference (TACT)},
           month = {October},
           title = {Solution-processed doping and undoping zinc-oxide and copper-oxide thin films},
          author = {Van Dung Nguyen and Quang Hoa Nguyen and Van Dung Tran and Nguyen Quoc Trinh Bui},
            year = {2017},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2626/},
        abstract = {Zinc-oxide (ZnO) and copper-oxide (CuO) based thin films have attracted a huge attention owing to controllable electrical conductivity and low-cost materials for manufacturing electronic and photonic devices. In this work, we have characterized on physical properties of undoped and doped (ex.: Ag, Al) ZnO and CuO thin films, prepared by using a solution process. For formation of precursor solution, zinc/copper nitrate hexahydrate (original or doping), water and citric acid were used as metal salt, solvent and stabilizer, respectively. After that, using the precursors mixed, ZnO/CuO thin films were spin-coated on glass substrates followed by an annealing process below 550oC. Structural, morphological, optical and electrical properties of the thin films were, in turn, evaluated by using X-ray diffraction, scanning electronic microscopy, UV-vis, and four-probe measurement systems. Achievement results show that, when annealing temperatures increased from 450?C to 550?C, the thin films were oriented more preferentially along (100) (002) and (102) directions. ZnO based thin films were relatively porous, and whose band-gap energy was closed to 3.2 eV. In addition, characterization on CuO thin films will be discussed in this conference.}
}