%0 Conference Paper
%A Nguyen, Van Dung
%A Nguyen, Quang Hoa
%A Tran, Van Dung
%A Bui, Nguyen Quoc Trinh
%A Bui Nguyen Quoc Trinh,
%B International Thin Films Conference (TACT)
%C Hualien, Taiwan
%D 2017
%F SisLab:2626
%T Solution-processed doping and undoping zinc-oxide and copper-oxide thin films
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2626/
%X Zinc-oxide (ZnO) and copper-oxide (CuO) based thin films have attracted a huge attention owing to controllable electrical conductivity and low-cost materials for manufacturing electronic and photonic devices. In this work, we have characterized on physical properties of undoped and doped (ex.: Ag, Al) ZnO and CuO thin films, prepared by using a solution process. For formation of precursor solution, zinc/copper nitrate hexahydrate (original or doping), water and citric acid were used as metal salt, solvent and stabilizer, respectively. After that, using the precursors mixed, ZnO/CuO thin films were spin-coated on glass substrates followed by an annealing process below 550oC. Structural, morphological, optical and electrical properties of the thin films were, in turn, evaluated by using X-ray diffraction, scanning electronic microscopy, UV-vis, and four-probe measurement systems. Achievement results show that, when annealing temperatures increased from 450°C to 550°C, the thin films were oriented more preferentially along (100) (002) and (102) directions. ZnO based thin films were relatively porous, and whose band-gap energy was closed to 3.2 eV. In addition, characterization on CuO thin films will be discussed in this conference.