TY  - CONF
ID  - SisLab2627
UR  - http://vmrs.org.vn/danh-muc/236/SMPS-2017---TP.-Hue---19-21-thang-10-nam-2017.htm
A1  - Nguyen, Quang Hoa
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2017/10//
N2  - Copper oxide (CuO) thin films have been successfully prepared by a solution process. In this study, we find out an optimum condition to form CuO precursors solution, as well as  to fabricate CuO thin fims. To improve the films quality, analysis on crystalline structure and surface morphology of CuO thin films was systematically carried out by using X-ray diffraction (XRD) spectrometer and scanning electron microscope (SEM). We obtained that whole CuO thin films exhibit a single phase with monoclinic structure. The SEM images show that the particle size of CuO thin films was about 20÷30 nm, and the thickness of CuO thin film was 180 nm. In sequence, the electrical property of CuO thin films was evaluated by using four-point probes measurement, and the optical property was investigated by UV/VIS spectrometer. We achieved that the optimum CuO thin films possessed an electrical resistivity of 9.02 k?/?. Also, from absorbance spectra, we extracted that band-gap energy of CuO thin films was ranged from 2.20 eV to 2.30 eV.
TI  - CHARACTERIZATION ON CuO THIN FILMS DEPOSITED BY SOLUTION PROCESS
M2  - Hue, Vietnam
AV  - public
T2  - H?I NGH? V?T LƯ CH?T R?N VÀ KHOA H?C V?T LI?U TOÀN QU?C L?N TH? 10 (SPMS 2017)
ER  -