eprintid: 2632
rev_number: 9
eprint_status: archive
userid: 303
dir: disk0/00/00/26/32
datestamp: 2017-11-16 04:26:10
lastmod: 2017-11-16 04:26:10
status_changed: 2017-11-16 04:26:10
type: article
metadata_visibility: show
creators_name: Tran, Van Dung
creators_name: Hoang, Ha
creators_name: Hoang, Thi Thanh Tam
creators_name: Vu, Thi Dung
creators_name: Nguyen, Van Dung
creators_name: Do, Hong Minh
creators_name: Vu, Thi Huyen Trang
creators_name: Nguyen, Quang Hoa
creators_name: Bui, Nguyen Quoc Trinh
creators_id: trinhbnq@vnu.edu.vn
corp_creators: Bui Nguyen Quoc Trinh
title: INVESTIGATION ON STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 THIN FILMS
ispublished: pub
subjects: Phys
divisions: fac_physic
abstract: Lanthanum doped bismuth titanate (Bi3.25La0.75Ti3O12 abbreviated as BLT) has been known
as one of typical materials for Bi-layered perovskite structure which possess several unique
properties such as good fatigue with metal electrode and stable remanent polarization, hence it
has potential applications in ferroelectric random access memory. In this work, the BLT thin
films were fabricated on Pt/TiO2/SiO2/Si substrates by using a solution process, and then their
features including crystal structure, surface morphology, and electrical properties were
characterized by using X-ray diffraction system (XRD), scanning electron microscopy (SEM),
and electrical measurement system (Radiant Precision LC 10), respectively. The obtained results
point out that the BLT thin film annealed at 725oC is mostly optimum from a viewpoint of film
quality and ferroelectricity. In particular, the optimum BLT thin film having a thickness of 200
nm does not contain any cracks on the sample surface, and the grain size is closed to 400 nm from
SEM observation. XRD patterns imply that the BLT thin film had stoichiometric structure with
preferred orientations of (117) and (006), when annealed at temperatures higher than 725oC. In
addition, we found the influence of La (0.75) dopping on c-axis-oriented growth of BLT thin
films is clear from the structural analysis. The remanent polarization of optimum BLT thin film is
approximately 10 µC/cm2, but the ferroelectric hysteresis loops are not saturated at low applied
voltages.
date: 2016-10-26
date_type: published
full_text_status: public
publication: Journal of Science and Technology
volume: 54
number: 1A
pagerange: 80-87
refereed: TRUE
issn: 0866-708X
related_url_url: http://vjs.ac.vn/index.php/jst
citation:   Tran, Van Dung and Hoang, Ha and Hoang, Thi Thanh Tam and Vu, Thi Dung and Nguyen, Van Dung and Do, Hong Minh and Vu, Thi Huyen Trang and Nguyen, Quang Hoa and Bui, Nguyen Quoc Trinh  (2016) INVESTIGATION ON STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 THIN FILMS.  Journal of Science and Technology, 54  (1A).   pp. 80-87.  ISSN 0866-708X     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2632/1/Journal%20of%20Sci%20and%20Tech-2016%20%28Dung%29.pdf