<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel"^^ . "We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solutionprocessed\r\nindium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3\r\nferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a\r\nsingle-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off\r\ncurrent ratio of more than 105 and a memory window of 2 V. It is interesting that even using\r\nsolution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA\r\nat operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of\r\nsingle-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced\r\ncharge of the ferroelectric gate, compensated to the small mobility of the ITO channel."^^ . "2014-03-28" . . "30" . "1" . . "VNU"^^ . . . "Journal of Science: Mathematics-Physics"^^ . . . "08668612" . . . . . . . . . . . . . "Thi Huyen Trang"^^ . "Vu"^^ . "Thi Huyen Trang Vu"^^ . . "Hong Minh"^^ . "Do"^^ . "Hong Minh Do"^^ . . "Nguyen Quoc Trinh"^^ . "Bui"^^ . "Nguyen Quoc Trinh Bui"^^ . . "Bui Nguyen Quoc Trinh"^^ . . . . . . . "Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel (PDF)"^^ . . . "Journal of Science_ M and P 2014.pdf"^^ . . "HTML Summary of #2634 \n\nHuge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel\n\n" . "text/html" . . . "Engineering Physics" . .