TY  - JOUR
ID  - SisLab2634
UR  - https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2634/
IS  - 1
A1  - Do, Hong Minh
A1  - Vu, Thi Huyen Trang
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2014/03/28/
N2  - We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solutionprocessed
indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3
ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a
single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off
current ratio of more than 105 and a memory window of 2 V. It is interesting that even using
solution-processed ITO channel, the saturated ?on? current in the FGT reached as high as 4.6 mA
at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of
single-crystalline STO(111) wafer. The large ?on? current is mainly due to the huge induced
charge of the ferroelectric gate, compensated to the small mobility of the ITO channel.
PB  - VNU
JF  - Journal of Science: Mathematics-Physics
VL  - 30
SN  - 0866-8612
TI  - Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
SP  - 16
AV  - public
EP  - 23
ER  -