%A Hong Minh Do
%A Thi Huyen Trang Vu
%A Nguyen Quoc Trinh Bui
%J Journal of Science: Mathematics-Physics
%T Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
%X We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solutionprocessed
indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3
ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a
single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off
current ratio of more than 105 and a memory window of 2 V. It is interesting that even using
solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA
at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of
single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced
charge of the ferroelectric gate, compensated to the small mobility of the ITO channel.
%N 1
%P 16-23
%V 30
%D 2014
%I VNU
%L SisLab2634