eprintid: 2634
rev_number: 6
eprint_status: archive
userid: 303
dir: disk0/00/00/26/34
datestamp: 2017-11-16 04:29:00
lastmod: 2017-11-16 04:29:00
status_changed: 2017-11-16 04:29:00
type: article
metadata_visibility: show
creators_name: Do, Hong Minh
creators_name: Vu, Thi Huyen Trang
creators_name: Bui, Nguyen Quoc Trinh
creators_id: trinhbnq@vnu.edu.vn
corp_creators: Bui Nguyen Quoc Trinh
title: Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
ispublished: pub
subjects: Phys
divisions: fac_physic
abstract: We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solutionprocessed
indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3
ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a
single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off
current ratio of more than 105 and a memory window of 2 V. It is interesting that even using
solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA
at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of
single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced
charge of the ferroelectric gate, compensated to the small mobility of the ITO channel.
date: 2014-03-28
date_type: published
publisher: VNU
full_text_status: public
publication: Journal of Science: Mathematics-Physics
volume: 30
number: 1
pagerange: 16-23
refereed: TRUE
issn: 0866-8612
citation:   Do, Hong Minh and Vu, Thi Huyen Trang and Bui, Nguyen Quoc Trinh  (2014) Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel.  Journal of Science: Mathematics-Physics, 30  (1).   pp. 16-23.  ISSN 0866-8612     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2634/1/Journal%20of%20Science_%20M%20and%20P%202014.pdf