?url_ver=Z39.88-2004&rft_id=US9627347+B2&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.relation=https%3A%2F%2Feprints.uet.vnu.edu.vn%2Feprints%2Fid%2Feprint%2F2731%2F&rft.title=Method+of+manufacturing+semiconductor+device+and+semiconductor+device+manufacturing+apparatus&rft.creator=Aoyagi%2C+Masahiro&rft.creator=Bui%2C+Thanh+Tung&rft.creator=Suzuki%2C+Motohiro&rft.creator=Watanabe%2C+Naoya&rft.creator=Kato%2C+Fumiki&rft.creator=Ma%2C+Lai+Na&rft.creator=Nemoto%2C+Shunsuke&rft.subject=Electronics+and+Computer+Engineering&rft.description=A+method+of+manufacturing+a+semiconductor+device+according+to+the+present+invention+comprises%3A%0D%0Aa+bump+forming+step+of+forming+a+bump+electrode+100+on+a+semiconductor+chip+1%2C+the+bump+electrode+100+protruding+in+a+substantially+conical+shape%3B%0D%0Aa+pad+forming+step+of+forming+a+pad+electrode+200+on+a+substrate+10%2C+the+pad+electrode+200+having+a+recess+210+with+inner+lateral+surfaces+thereof+defining+a+substantially+pyramidal+shape+or+a+prism+shape%3B%0D%0Aa+pressing+step+of+pressing+the+bump+electrode+100+and+the+pad+electrode+200+in+a+direction+which+brings+them+closer+to+each+other%2C+with+the+bump+electrode+100+being+inserted+in+the+recess+210+so+that+the+central+axis+of+the+bump+electrode+100+and+the+central+axis+of+the+recess+210+coincide+with+each+other%3B+and%0D%0Aan+ultrasonic+joining+step+of+joining+the+bump+electrode+100+and+the+pad+electrode+200+by+vibrating+at+least+one+of+the+bump+electrode+100+and+the+pad+electrode+200+using+ultrasonic+waves.&rft.date=2017-04-18&rft.type=Patent&rft.type=NonPeerReviewed&rft.identifier=++National+Institute+Of+Advanced+Industrial+Science+And+Technology++(2017)+Method+of+manufacturing+semiconductor+device+and+semiconductor+device+manufacturing+apparatus.++US9627347+B2.+++&rft.relation=https%3A%2F%2Fwww.google.com%2Fpatents%2FUS9627347&rft.relation=US9627347+B2