%0 Patent
%@ US9627347 B2
%A Aoyagi, Masahiro
%A Bui, Thanh Tung
%A Suzuki, Motohiro
%A Watanabe, Naoya
%A Kato, Fumiki
%A Ma, Lai Na
%A Nemoto, Shunsuke
%D 2017
%F SisLab:2731
%T Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2731/
%X A method of manufacturing a semiconductor device according to the present invention comprises:  a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape;  a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape;  a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and  an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.