eprintid: 2731
rev_number: 9
eprint_status: archive
userid: 270
dir: disk0/00/00/27/31
datestamp: 2017-12-03 11:53:14
lastmod: 2017-12-03 11:53:14
status_changed: 2017-12-03 11:53:14
type: patent
metadata_visibility: show
creators_name: Aoyagi, Masahiro
creators_name: Bui, Thanh Tung
creators_name: Suzuki, Motohiro
creators_name: Watanabe, Naoya
creators_name: Kato, Fumiki
creators_name: Ma, Lai Na
creators_name: Nemoto, Shunsuke
creators_id: m-aoyagi@aist.go.jp
creators_id: tungbt@vnu.edu.vn
creators_id: Motohiro@gmail.com
creators_id: naoya-watanabe@aist.go.jp
creators_id: Fumiki@gmail.com
creators_id: LaiNa@gmail.com
creators_id: Shunsuke@gmail.com
title: Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus
ispublished: pub
subjects: ElectronicsandComputerEngineering
divisions: fac_fet
abstract: A method of manufacturing a semiconductor device according to the present invention comprises:
a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape;
a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape;
a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and
an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.
date: 2017-04-18
date_type: published
official_url: https://www.google.com/patents/US9627347
id_number: US9627347 B2
full_text_status: none
patent_applicant: National Institute Of Advanced Industrial Science And Technology
citation:   National Institute Of Advanced Industrial Science And Technology  (2017) Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus.  US9627347 B2.