eprintid: 2893
rev_number: 9
eprint_status: archive
userid: 303
dir: disk0/00/00/28/93
datestamp: 2018-01-03 07:25:27
lastmod: 2018-01-03 07:25:27
status_changed: 2018-01-03 07:25:27
type: article
metadata_visibility: show
creators_name: Hoang, Ha
creators_name: Bui, Nguyen Quoc Trinh
creators_id: trinhbnq@vnu.edu.vn
title: Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate
ispublished: inpress
subjects: Phys
divisions: fac_physic
abstract: PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 µC/cm2 and leakage current of 8×10-8 A were obtained at applied voltage of 5 V.
date: 2017-12-28
date_type: published
publisher: VNU
full_text_status: public
publication: Journal of Science: Mathematics-Physics
refereed: TRUE
issn: 0866-8612
citation:   Hoang, Ha and Bui, Nguyen Quoc Trinh  (2017) Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate.  Journal of Science: Mathematics-Physics .    ISSN 0866-8612    (In Press)  
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2893/1/2017%20accepted_JS-MaP_BNQTrinh.pdf