@article{SisLab2914,
          volume = {8},
          number = {2},
           month = {April},
          author = {Tuan Anh Vu and Kyoya Takano and Minoru Fujishima},
           title = {Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications},
       publisher = {Institute of Advanced Engineering and Science},
         journal = {International Journal of Electrical and Computer Engineering},
            year = {2018},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2914/},
        abstract = {This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.}
}